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Document Number: 89114 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 10-May-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS6P4C
Vishay General Semiconductor
New Product
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25
?C unless otherwise noted)
Fig. 1 - Maximum Forwar
d Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 5 - Typical Juncti
on Capacitance Per Diode
0
2
4
5
6
7
0 25 50 75 100 125 150 175
Average Forward Rectified C
u
rrent
(A)
Lead Temperature (°C)
Resistive or Inductive Load
1
3
TL
Meas
ured
at the Cathode Band Terminal
0
2.2
03.60.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0.1 1 10 100
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = tp/T tp
T
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.01
0.1
1
10
0 0.4 0.5 0.6 0.7 0.90.1 0.30.2
0.8
Instantaneous Forward Voltage (V)
Instantaneo
u
s Forward C
u
rrent (A)
TA
= 150 °C
TA
= 125 °C
TA
= 25 °C
0.001
0.01
0.1
1
10
100
10 20 30 40 6050 70 9080 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s Reverse C
u
rrent (mA)
TA
= 150 °C
TA
= 125 °C
TA
= 25 °C
10
1000
100
Reverse Voltage (V)
J
u
nction Capacitance (pF)
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 mV
p-p
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